| 摘要 |
PURPOSE: A method for manufacturing salicide of a semiconductor device is provided to control damage caused by a chemical material of a wet cleaning process to an edge portion of a gate poly, by making a sidewall spacer of a gate electrode higher than a gate poly silicon. CONSTITUTION: A gate oxidation layer is formed on a silicon wafer(11) having an isolation region(12), and a polysilicon layer is evaporated on the gate oxidation layer. And, a poly oxidation layer(13) is formed on the polysilicon layer. The poly oxidation layer, polysilicon layer and gate oxidation layer are patterned to form a gate electrode on the poly oxidation layer. After a cap oxidation layer(14) is formed on the exposed gate electrode, poly oxidation layer and silicon wafer, an insulating layer is evaporated on the entire surface and anisotropically etched to form a sidewall spacer(15) on the gate electrode and poly oxidation layer. The cap oxidation layer exposed by wet-cleaning the silicon wafer and the poly oxidation layer on the gate electrode are eliminated. A metal thin film for forming silicide is evaporated on the entire surface of the silicon wafer. And, a RTP(Rapid Thermal Process) is performed regarding the metal thin film to form salicide on the surface of the gate poly and silicon wafer.
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