| 发明名称 | Nonvolatile semiconductor memory device provided with charge storage layer in memory cell | ||
| 摘要 | A nonvolatile semiconductor memory device includes a semiconductor portion, a first oxygen-containing portion provided on the semiconductor portion, a silicon-containing portion provided on the first oxygen-containing portion, a first film provided on the silicon-containing portion and including a lamination of a first portion containing silicon and oxygen and a second portion containing silicon and nitrogen, a first high dielectric insulating portion provided on the first film and having an oxide-containing yttrium, hafnium or aluminum, a second oxygen-containing portion provided on the first high dielectric insulating portion, a second high dielectric insulating portion provided on the second oxygen-containing insulating portion and having an oxide-containing yttrium, hafnium or aluminum, a third oxygen-containing portion provided on the second high dielectric insulating portion, and a second film provided on the third oxygen-containing portion. | ||
| 申请公布号 | US9450108(B2) | 申请公布日期 | 2016.09.20 |
| 申请号 | US201514697121 | 申请日期 | 2015.04.27 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Matsuo Kazuhiro;Tanaka Masayuki;Furuhata Takeo;Nakahara Koji |
| 分类号 | H01L29/792;H01L27/115;H01L29/51;H01L29/788 | 主分类号 | H01L29/792 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A nonvolatile semiconductor memory device comprising: a semiconductor portion; a first oxygen-containing portion provided on the semiconductor substrate; a silicon-containing portion provided on the first oxygen-containing portion; a first film provided on the silicon-containing portion and including a lamination of a first portion containing silicon and oxygen and a second portion containing silicon and nitrogen; a first high dielectric insulating portion provided on the first film and having an oxide-containing yttrium, hafnium or aluminum; a second oxygen-containing portion provided on the first high dielectric insulating portion; a second high dielectric insulating portion provided on the second oxygen-containing portion and having an oxide-containing yttrium, hafnium or aluminum; a third oxygen-containing portion provided on the second high dielectric insulating portion; and a second film provided on the third oxygen-containing portion. | ||
| 地址 | Minato-ku JP | ||