发明名称 ELECTRODE PLATE FOR PLASMA ETCHING
摘要 PROBLEM TO BE SOLVED: To provide an electrode plate, for a plasma etching operation, by which carbon particles which fall onto the surface of a wafer adhere thereto are small in the etching operation, by which the etching operation is performed stably and by which an electrode can be used for many hours. SOLUTION: In an electrode plate for a plasma etching operation, glasslike carbon whose raw material is a mixture of a liquid phenolic resin and a powdery phenolic resin having a number average molecular weight of 250 to 350 and having a viscosity at 25 deg.C of 100 to 350 centipoises is used as a basic material.
申请公布号 JPH0945669(A) 申请公布日期 1997.02.14
申请号 JP19950198839 申请日期 1995.08.03
申请人 HITACHI CHEM CO LTD 发明人 OTA KOJIRO;KAMATA MITSUJI;SUZUKI TAKAYUKI
分类号 H05H1/46;C01B31/02;C04B35/52;C23F4/00;H01L21/302;H01L21/3065 主分类号 H05H1/46
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