发明名称 SURFACE EMITTING TYPE SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 PURPOSE:To improve the coupling factor between a light emitting device and an optical fiber by a method wherein the distance between the light emitting surface of a light emitting part and the tip of the cylindrical part or the spheri cal part of a lens layer is reduced. CONSTITUTION:A trench 2 with a trapezoid cross section is formed in the surface of an n-type InP substrate 1. An n-type InP buffer layer 3 is built up on the substrate 1 and a trench 4 with a circular arc cross section is formed in its surface. Further, an n-type InGaAsP lens layer 5 is built up on the layer 3 and its surface is made to be flat and an n-type InP cladding layer 6, a p-type InGaAs active layer 7, a p-type InP cladding layer 8 and a p-type InGaAsP cap layer 9 are built up. At that time, the forbidden bend width of the layer 5 is so selected as to be larger than that of the layer 7 and the refractive index of the layer 5 is so selected as to be larger than those of the layers 6 and 3. With this constitution, the distance between the light emitting surface of the light emitting part 10 and the tip of the cylindrical part or the spherical part of the layer 5 can be reduced so that the coupling efficiency between the light emitting device and an optical fiber can be improved.
申请公布号 JPS6412584(A) 申请公布日期 1989.01.17
申请号 JP19870168412 申请日期 1987.07.06
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 KAWAGUCHI MASAZUMI;TAKABAYASHI TSUNEHISA
分类号 H01L33/12;H01L33/14;H01L33/20;H01L33/30;H01L33/58 主分类号 H01L33/12
代理机构 代理人
主权项
地址
您可能感兴趣的专利