NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

A nonvolatile memory device may include a memory area suitable for performing a cache operation in response to a command, a memory controller suitable for setting a peak current period in which a current peaks during the cache operation of the memory area, and a command latch unit suitable for receiving the command, transferring the command to the memory controller, and latching a next command and transferring the next command to the memory controller after the peak current period when the next command is received during the peak current period. After a cache operation corresponding to a first peak current period is completed, a next cache operation corresponding to a second peak current period is performed, so that it is possible to reduce the overall peak current.

主权项

1. A nonvolatile memory device comprising:
a memory area suitable for performing a cache operation in response to a command; a memory controller suitable for setting a peak current period in which current peaks during the cache operation of the memory area; and a command latch unit suitable for receiving the command, transferring the command to the memory controller, and latching a next command and transferring the next command to the memory controller, after the peak current period, when the next command is received during the peak current period.