| 摘要 |
<p>1311042 Sputtering apparatus INTERNATIONAL BUSINESS MACHINES CORP 4 Jan 1971 [22 Jan 1970] 266/71 Heading C7F RF sputtering apparatus includes a vacuum chamber 11, an anode 51, a target 19 in spaced relation to 51 and having at least a portion of 19 parallel to 51, a cathode 18 spaced from target 19 and shielded from anode 51 thereby, means 34 to apply R. F. between cathode 18 and anode 51, and a fluent material 27 in the space between cathode 18 and target 19 to transfer electrical energy from the cathode to the target to sputter material from the target. The fluent material 27 is a good medium for transfer of heat and electrical energy, is non-solidfying and should have low vapour pressure, and may be a liquid metal, e.g. Ga, As, or Hg, or a metal paste, e.g. containing Ag. Argon may be the sputtering gas, target 19 may be quartz, vacuum pumps 16 and 45 may work in sychronism to avoid differential pressures between chamber 11 and the inside of the cathode structure; and both cathode and anode structures may be conventionally water-cooled. Various means of preventing fluent material from leaking into a vacuum space are described. In a modification Fig.5, (not shown), target 19 is in the form of a cup having a planar cathode near the bottom thereof, de-ionised water is used as the fluent material, and is fed down the cathode support stem and between the planar cathode and the cup bottom.</p> |
