| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the freedom in the structure of a gate electrode or a channel part increases by making the gate electrode which specifies the channel region of a MISFIT into a new structure which enables in its turn the reduction of the surface area of the board occupied by single MISFIT, or the increase of the drain current of the MISFIT, and the control of a multivalent digital signal with a single MISFIT. SOLUTION: This semiconductor device possesses the gate electrode G of a MOSFET whose one part at least is buried in the semiconductor substrate 300, a gate insulating film 308 which covers the surface of the gate electrode within the semiconductor substrate, the channel regions 306 of the MOSFET which are made in contact with the gate insulating film within the semiconductor substrate and lie along both flanks of the gate electrode within the semiconductor substrate, and the source region S and the drain region D of the MOSFET which range from the channel region.
|
