| 摘要 |
A method for fabricating a semiconductor device is provided to prevent discoloration of a pad due to a developing solution by performing a heat process in the state that a barrier layer remains on a metal layer to open the pad. A substrate on which a metal layer(31) is formed is provided. The metal layer has a barrier layer on an upper portion thereof. A passivation layer(34) is formed on the upper portion of the substrate to cover the barrier layer. A part of the passivation layer is etched until the barrier layer is exposed, but the metal layer is not exposed. An organic passivation layer pattern(38) is formed on the passivation layer. An etching process is performed by using the organic passivation layer pattern so that the metal layer is exposed to etch the exposed passivation layer and the barrier layer. The metal layer is formed with a metal material for forming a pad(33).
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