发明名称 |
SUPER-SELF-ALIGNED CONTACTS AND METHOD FOR MAKING THE SAME |
摘要 |
A number of first hard mask portions are formed on a dielectric layer to vertically shadow a respective one of a number of underlying gate structures. A number of second hard mask filaments are formed adjacent to each side surface of each first hard mask portion. A width of each second hard mask filament is set to define an active area contact-to-gate structure spacing. A first passage is etched between facing exposed side surfaces of a given pair of neighboring second hard mask filaments and through a depth of the semiconductor wafer to an active area. A second passage is etched through a given first hard mask portion and through a depth of the semiconductor wafer to a top surface of the underlying gate structure. An electrically conductive material is deposited within both the first and second passages to respectively form an active area contact and a gate contact. |
申请公布号 |
WO2009076661(A2) |
申请公布日期 |
2009.06.18 |
申请号 |
WO2008US86727 |
申请日期 |
2008.12.12 |
申请人 |
TELA INNOVATIONS, INC.;SMAYLING, MICHAEL, C. |
发明人 |
SMAYLING, MICHAEL, C. |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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