NEW LAYOUT FOR LDMOS

摘要

A layout structure, a semiconductor device and an electronic apparatus are provided. The layout structure includes at least one LDMOS. The LDMOS includes a source, a drain and a gate. The drain is strip-shaped, the source and gate are cyclic structures, the inner circumference of the source is less than the outer circumference of the gate but is greater than the inner circumference of the gate, the inner ring of the source overlaps with the gate in all directions, and the drain is located inside the inner ring of the gate. Because the source and gate are configured as cyclic structures and the inner ring of the source overlaps with the gate in every direction, the layout structure can increase the current and reduce the area of LDMOS devices. Semiconductor devices manufactured based on the layout structure and electronic apparatuses including the semiconductor devices also have the above-described advantages.

主权项

1. A layout structure, comprising at least one laterally diffused metal oxide semiconductor (LDMOS), the at least one LDMOS including a source, a drain and a gate, wherein the drain is a strip-shaped structure, the source and the gate are cyclic structures, an inner circumference of the source is less than an outer circumference of the gate but is greater than an inner circumference of the gate, an inner ring of the source overlaps with the gate in all directions, and the drain is located inside an inner ring of the gate.