| 摘要 |
PURPOSE:To reduce dependency on secondary electron emission angle and improve voltage measurement precision for a sample surface in an electron beam device for which external observation is possible for action conditions of each part of a semiconductor device by providing a collimate grid added between a pullout grid and an analyzing grid provided between a sample and a radiation beam. CONSTITUTION:A sample 3 to be observed is disposed on the underside of an aperture through the center part of an objective lens 1, and an electron beam 2 is radiated to it from the top. In this constitution are provided an analyzing grid 5 of a flat form positioned on the incident side in a beam passage in the aperture and a pullout grid 4 positioned on the sample side, and a beam passing through the grid 5 is detected by a plurality of secondary electron detectors 6, where a collimate grid 8, of a flat similarly, is disposed added between the grid 5 and 4. By composing this way, a proper positive potential is applied to the grid 8, so an orbit 7 of a secondary electron is collimated, or paralleled, thereby the inclination angle to the grid 5 is reduced to zero. |
