发明名称 DISTRIBUTED REFLECTOR SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To obtain a distributed feedback semiconductor laser in which a constant relationship of gain is sustained for respective polarized state occurring in an active layer when the polaroid state of output light is switched and the wavelength thereof is varies. SOLUTION: The distributed reflector semiconductor laser has and active region, a phase control region 7 and a distributed reflector region 4. The active region has symmetrical waveguides 5, 14 and the gain factor of active region is not dependent on the polarized state of light causing amplification. The distributed reflector region 4 depends on the polarized state of light and has a structure of different Bragg wavelength while the phase control region 7 has a structure of different equivalent refractive index, dependent on the polarized state of light.
申请公布号 JPH09186408(A) 申请公布日期 1997.07.15
申请号 JP19960016954 申请日期 1996.01.04
申请人 CANON INC 发明人 NITTA ATSUSHI
分类号 G02F1/00;H01S5/00;H01S5/042;H04B10/00;H04B10/40;H04B10/50;H04B10/60 主分类号 G02F1/00
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