Simultaneous provision of controlled height bonding material at a wafer level and associated structures

摘要

Different techniques may be used to realize the simultaneous provision of bonding material at a controlled height on a wafer level. These techniques include photolithographically patterning a layer of bonding material and providing spacer elements on a wafer then contacting another surface having the bonding material provided thereon to transfer the bonding material to the spacer elements. The patterning of the bonding material may include using a mask direct contact with or spaced from the bonding material. The providing of the spacer elements may include forming the spacers in the wafer itself or attaching spacer elements, particularly a wafer of spacer elements. The resultant integrated structure has controlled spacing between the bonded elements.