发明名称 Method for crystallizing amorphous silicon into polysilicon and mask used therefor
摘要 A mask for laser-crystallizing amorphous silicon into polysilicon is provided. The mask comprises a transparent substrate having a first block, a second block, and a third block with equal sizes. The second block is located between the first block and the third block. The first block includes a plurality of first transmission regions and a plurality of first opaque regions located between the first transmission regions. The second block includes a plurality of second transmission regions correspond to the first opaque regions and a plurality of second opaque regions located between the second transmission regions and corresponds to the first transmission regions. The third block includes a plurality of third transmission regions arranged corresponding to the centers of the first transmission regions and corresponding to centers of the second transmission regions and a plurality of third opaque regions located between the third transmission regions.
申请公布号 US7579123(B2) 申请公布日期 2009.08.25
申请号 US20060557947 申请日期 2006.11.08
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 CHU FANG-TSUN;CHEN YU-CHENG
分类号 G03F1/00 主分类号 G03F1/00
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