PH SENSOR AND METHOD FOR FABRICATING THE SAME

摘要

The present invention relates to a hydrogen ion concentration (pH) sensor and a manufacturing method thereof which construct a gate electrode in a silver (Ag) nano-wire thin film form when using a field effect transistor (FET) of a top gate structure as a pH sensor to maximize a specific surface area of the gate electrode to improve accuracy and reliability of pH measurement. According to the present invention, the pH sensor comprises: a substrate; a semiconductor activation layer disposed on the substrate; a source electrode and a drain electrode which are disposed on the substrate and come in contact with both sides of the semiconductor activation layer; a gate insulation film disposed on the entire surface of the substrate including the semiconductor activation layer, the source electrode, and the drain electrode; a gate electrode disposed on the gate insulation film; and a sample entry/exit structure disposed on the gate insulation film to provide a contact space of a sample to be analyzed and the gate electrode. The gate electrode has a structure where Ag nano-wire is deposited.