| 摘要 |
PURPOSE:To enable thermostability, close joint, and corrosion resistance to be fully obtained, by forming a joint layer, in which at least one of In oxide and Sn oxide is contained, between a plurality of single-crystal semiconductor substrates whose facing surfaces are oxidized. CONSTITUTION:An In-Sn alloy layer is evaporated on two Si single-crystal substrates 1 and 2 on whose surfaces SiO2 layers 1a and 2a are respectively formed. The substrates 1 and 2 are pressed and jointed facing the In-Sn alloy layer under a vacuum atmosphere and heated for their fusion. The alloy layer on this joint material is then oxidized. Sn remaining in this joint material is finally oxidized. Thus, a joint layer 3 is uniformly formed of metallic oxide, which comprises Sn oxide and In oxide, with thermostability of 1000 deg.C or more, fully close joint, and hard solubility to acid and alkali, between the substrates 1 and 2 at a process temperature of 900 deg.C or less.
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