| 发明名称 |
Selbsttätig geschütztes Halbleiterschutzelement |
| 摘要 |
The present invention relates to a monolithic semiconductor protection component connected between a first semiconductor region (11) visible on a first face of a semiconductor chip and a second semiconductor region (12) visible on a second face. The first region is separated into several disjointed zones and each zone is linked to an electrode (27) by way of a fuse such as a gold wire (26). <IMAGE> |
| 申请公布号 |
DE69308910(T2) |
申请公布日期 |
1997.07.10 |
| 申请号 |
DE1993608910T |
申请日期 |
1993.01.25 |
| 申请人 |
SGS-THOMSON MICROELECTRONICS S.A., GENTILLY, FR |
发明人 |
PEZZANI, ROBERT, F-37210 VOUVRAY, FR |
| 分类号 |
H01L21/82;H01L21/822;H01L23/62;H01L27/02;H01L27/04;H01L29/866;(IPC1-7):H01L23/62 |
主分类号 |
H01L21/82 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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