| 摘要 |
PROBLEM TO BE SOLVED: To improve air insulation crossover through multi-chip module technology by bonding a flip-chip on a substrate for interconnection, and forming an air bridge between the flip-chip and the substrate for interconnection in a transistor IC. SOLUTION: A silicon-made substrate 51 for interconnection is provided with an oxide layer 52, which covers the substrate 51 for interconnection and a semiconductor chip 11 of an IC chip is mounted on the substrate 52 by a flip-chip assembly 62 via the oxide layer 52. Then, an air insulation type crossover region is formed as an air bridge for the semiconductor chip 11 via plating balls 56 and a layer 55. At this time, the flip-chip assembly 62 which is a module for interconnection constitutes a silicon chip having an oxide layer 63, the layer 55, and an underbump metal layer 64. As a result of this method, air insulation crossover can be improved with the use of multi-chip module technology. |
