| 摘要 |
PROBLEM TO BE SOLVED: To provide a new technology for producing a group III nitride semiconductor substrate.SOLUTION: There is provided a group III nitride semiconductor substrate 1 having a tabular first layer 2 including a plurality of crystal pieces 10 of a group III nitride semiconductor arranged with each clearance 30 therebetween, and a binder 20 interposed between each clearance 30, for holding the plurality of crystal pieces 10, and the clearance 30 has a width widened gradually from a first principal surface 3 toward a second principal surface 4 of the first layer 2.SELECTED DRAWING: Figure 1 |
