| 摘要 |
PROBLEM TO BE SOLVED: To obtain an integrated type semiconductor-acceleration sensor, which can be manufactured by a minute semiconductor manufacturing process and has the high shock resistance and the function of high sensibility as a compact unitary body shape and the manufacturing method thereof. SOLUTION: In this sensor, a semiconductor substrate 1, a first nitride film 2, a first polysilicon layer 3, a second nitride film 4, a second polysilicon layer 5, a third nitride film 6 and a third polysilicon layer 7 are sequentially formed. In a space part 17, which is surrounded and sealed by the first niteride film 2, the first polysilicon layer 3, the second niteride film 4, the second polysilicon layer 5, the third niteride film 6 and the third polysilicon layer 7 and a part of the second polysilicon layer 5 is formed as a movable part 5a. |
