| 摘要 |
PURPOSE:To reduce an occupied area by shaping a load transistor and a drive transistor to a plurality of each Si layer forming an inverter circuit so as to be mutually stacked. CONSTITUTION:An n<+> layer 12 penetrating a p type substrate 11 is exposed and SiO2 22, 13 are formed, and an n layer 14 is stacked and an n layer 14' contacting with the p layer 11 in the window of the SiO2 13 and p layers 15 at both sides are shaped. A p layer 17 is stacked onto SiO2 16, a window thereof is bored onto the n layer 14', an n<+> layer 18 contacting with the n layer 14' and an n<+> source 19 separated from the layer 18 are molded to the window section, the surface is coated with SiO2 20 and a gate electrode 21 is formed, the MOS transistor TR1 for drive using the n<+> layer 18 as a drain and the junction type FET TR2 for load of an n<+> source 18, a p gate 15 and an n<+> drain are shaped, and the layer 12 is connected to a power supply VDD. With the inverter circuit by this constitution, the occupied area is reduced to approximately half conventional devices, and the degree of integration is increased without damaging characteristics. |
