| 摘要 |
PROBLEM TO BE SOLVED: To increase the data access speed and data transfer speed by reducing a current made to flow in a power source trunk line of a sense amplifier. SOLUTION: When a sub-array S of some memory block MB is selected, the sub-array S is not selected along one lateral line of semiconductor chips CH, but selected laterally while shifting slantedly. For example, in the case of the memory block MB in an upper left side of a memory 1, a sub-array S of the lowest left side part of the memory block MB, a sub-array S of an upper side by two sections of a sub-array S being adjacent to the above sub- array S, in the same way, a sub-array S of an upper side by two sections of a sub-array S being adjacent to the above, and the like are successively and slantly activated. Thereby, as the same sense amplifier columns are not activated concentrically, a current made to flow in one power source trunk line of a sense amplifier supplying a power source to an amplifier can be reduced, the data access speed, data transfer speed, and the like can be increased.
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