发明名称 |
Method for fabricating low cost integrated resistor capacitor combinations |
摘要 |
A low cost method for forming an integrated resistor capacitor combination using only three masks and three mask exposure steps is described. A layer of resistor material is formed on a substrate and patterned forming a resistor and a first capacitor plate. A photoresist mask is then formed covering the resistor and a contact region of the first capacitor plate. The substrate is then immersed in an anodization solution and that part of the first capacitor plate not covered by the photoresist mask is anodized forming a capacitor dielectric. The photoresist mask is then stripped. A layer of conductor material is then formed and patterned to form contacts to the resistor, a contact to the first capacitor plate, and a second capacitor plate.
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申请公布号 |
US5893731(A) |
申请公布日期 |
1999.04.13 |
申请号 |
US19970862796 |
申请日期 |
1997.05.23 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LEE, CHANG-SHU;CHU, TSUNG-YAO |
分类号 |
H01L21/02;H01L27/06;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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