Method and structure for finFET devices

摘要

A semiconductor device and a method of forming the same are disclosed. The device comprises a semiconductor substrate comprised of a first semiconductor material and having a plurality of isolation features, thereby defining a first active region and a second active region; a first fin semiconductor feature comprised of a second semiconductor material and formed in the first active region; and a second fin semiconductor feature comprised of a second semiconductor material and formed in the second active region. The first fin semiconductor feature is tensile strained and the second fin semiconductor feature is compressively strained.

主权项

1. A method of forming a semiconductor device, comprising the steps of:
receiving a semiconductor substrate comprised of a first semiconductor material and having a plurality of isolation features, thereby defining a first active region and a second active region; simultaneously forming a first fin feature comprised of a second semiconductor material in the first active region and a second fin feature comprised of the second semiconductor material in the second active region; forming a patterned thermal mask on a surface of the semiconductor substrate such that the first fin feature is left exposed; and, performing an annealing process on the first fin feature to reverse a strain in the first fin feature.