| 摘要 |
PURPOSE:To control an aluminum Al component contained in the surface of a window layer and make it a required small value so as to improve an ohmic property of an electrode formed near to the surface of the window layer by a method wherein the window layer is made to grow at a last stage. CONSTITUTION:Layers such as a P-conductivity type cap layer 11, 1.0mum or so, a P-conductivity type clad layer 12, 1.0mum or so, and a P-conductivity type active layer 13, 1.5mum or so, respectively in thickness, are formed on a P- conductivity type GaAs substrate 10 making use of a liquid phase epitaxy method(LPE). Then an n-conductivity type window layer 14 is made to grow after the growth of these layers is accomplished, that is, at a last stage of a liquid phase epitaxial growth method process, where the window layer 14 is 50mum thick. |
