发明名称 |
Through-field implant isolated devices and method |
摘要 |
Preferred embodiments include channel stop implants for CMOS devices by through field boron implants (152) after the field oxide (144, 145) has been grown and with the implant depth determined by the thin portions of the field oxide (145). Junction (154) breakdown is preserved by channeling the implant (152) to penetrate far below the junctions (154).
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申请公布号 |
US4890147(A) |
申请公布日期 |
1989.12.26 |
申请号 |
US19870038388 |
申请日期 |
1987.04.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TENG, CLARENCE W.;HAKEN, ROGER A. |
分类号 |
H01L21/265;H01L21/762 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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