发明名称 |
Multi-silicide in integrated circuit technology |
摘要 |
A method of forming an integrated circuit, and an integrated circuit, are provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over the gate dielectric. A sidewall spacer is formed around the gate and a source/drain junction is formed in the semiconductor substrate using the sidewall spacer. A bottom silicide metal is deposited on the source/drain junction and then a top silicide metal is deposited on the bottom silicide metal. The bottom and top silicide metals are formed into their silicides. A dielectric layer is deposited above the semiconductor substrate and a contact is formed in the dielectric layer to the top silicide.
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申请公布号 |
US6969678(B1) |
申请公布日期 |
2005.11.29 |
申请号 |
US20030700711 |
申请日期 |
2003.11.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHIU ROBERT J.;BESSER PAUL R.;CHAN SIMON SIU-SING;PATTON JEFFREY P.;FRENKEL AUSTIN C.;KAMMLER THORSTEN;RYAN ERROL TODD |
分类号 |
H01L21/285;H01L21/336;H01L21/44;H01L29/78;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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