| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a semiconductor substrate. A gate insulation film is formed on the semiconductor substrate. A gate electrode is formed on the gate insulation film. A side surface of the upper portion of the gate electrode is inclined downwardly from an upper surface of the gate electrode to a side surface of the lower portion of the gate electrode. A side surface of the lower portion of the gate electrode extends in a direction substantially perpendicular to a surface of the semiconductor substrate. |
| 申请公布号 |
US2016218014(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201514840880 |
申请日期 |
2015.08.31 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUBO Masahiko |
| 分类号 |
H01L21/311;H01L29/66;H01L29/423;H01L29/78 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a gate insulation film on the semiconductor substrate; and a gate electrode on the gate insulation film, wherein a side surface of an upper portion of the gate electrode is inclined downwardly from an upper surface of the gate electrode to a side surface of a lower portion of the gate electrode, and a side surface of the lower portion of the gate electrode extends in a direction substantially perpendicular to a surface of the semiconductor substrate. |
| 地址 |
Tokyo JP |
