| 摘要 |
A semiconductor device comprises: a semiconductor substrate, a semiconductor pillar projected from the semiconductor substrate, an insulating layer formed on the circumferential surface of the semiconductor pillar, a conductive side wall formed on the circumferential surface of the semiconductor pillar through the insulating layer, an insulating layer obtained by insulating a part of the conductive side wall in such a manner that the upper portion thereof are more insulated than other portion, an insulating layer formed on the substrate so that the surface of the insulating layer surrounds the conductive side wall and is continuously and flatly arranged at the head portion surface of the semiconductor pillar, and a conductive pattern an electrical contact with to the head portion surface of the semiconductor pillar electrically insulated from the conductive side wall.
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