| 发明名称 |
METHOD OF PROCESSING SINGLE-CRYSTAL SUBSTRATE |
| 摘要 |
A method of dividing a single-crystal substrate along a plurality of preset division lines, includes a shield tunnel forming step of applying a pulsed laser beam having such a wavelength that permeates through the substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, a protective member adhering step of adhering a protective member to the substrate before or after the shield tunnel forming step, and a grinding step of holding the protective member on the substrate, to which the shield tunnel forming step and the protective member adhering step are performed, on a chuck table of a grinding apparatus, grinding a reverse surface of the substrate to bring the substrate to a predetermined thickness, and dividing the substrate along the division lines along which the shield tunnels have been formed. |
| 申请公布号 |
US2016268155(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201615068141 |
申请日期 |
2016.03.11 |
| 申请人 |
DISCO CORPORATION |
发明人 |
Morikazu Hiroshi;Takeda Noboru;Shotokuji Takumi |
| 分类号 |
H01L21/683;H01L21/78 |
主分类号 |
H01L21/683 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of processing a single-crystal substrate to divide the single-crystal substrate along a plurality of preset division lines, comprising:
a shield tunnel forming step of applying a pulsed laser beam having such a wavelength that permeates through the single-crystal substrate to the single-crystal substrate along the division lines to form shield tunnels, each shield tunnel including a fine hole and an amorphous region shielding the fine hole, in the single-crystal substrate along the division lines; a protective member adhering step of adhering a protective member to the single-crystal substrate before or after the shield tunnel forming step; and a grinding step of holding the protective member on the single-crystal substrate, to which the shield tunnel forming step and the protective member adhering step are performed, on a chuck table of a grinding apparatus, grinding a reverse surface of the single-crystal substrate to bring the single-crystal substrate to a predetermined thickness, and dividing the single-crystal substrate along the division lines along which the shield tunnels have been formed. |
| 地址 |
Tokyo JP |
