SEMICONDUCTOR DEVICE HAVING A BONDING WIRE AND METHOD FOR MANUFACTURING IT

摘要

A semiconductor device in which an end of an aluminium bonding wire (23) is connected to a lead electrode (25) of copper or a copper alloy in a manner such that the thickness of a reaction layer (60) is 0.2 (micron) or more. In manufacture, heat treatment is effected to bring the reaction layer (60) to the desired thickness. The semiconductor device displays excellent electrical characteristics in high temperature conditions or in high temperature high humidity conditions.