Photodiode insulation structure

摘要

A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of the second conductivity type, the insulating structure including a trench crossing the semiconductor layer, the trench walls being coated with an insulating layer, the trench being filled with a conductive material and being surrounded with a P-doped area, more heavily doped than the semiconductor layer.

主权项

1. A structure, comprising:
photodiodes formed in a first semiconductor layer of a first conductivity type; a doped semiconductor substrate of the second conductivity type, the first semiconductor layer extending on the semiconductor substrate; an insulating structure formed in a trench crossing the first semiconductor layer, the trench having walls, the insulating structure including:
a first insulating layer coating the walls of the trench;a conductive material filling the trench; anda doped area of the second conductivity type surrounding the trench, the doped area being more heavily doped than the first semiconductor layer; and a contact electrically coupled with the conductive material and a zero bias voltage terminal, wherein the photodiodes include a second semiconductor layer positioned on the first semiconductor layer such that the first semiconductor layer is positioned between the semiconductor substrate and the second semiconductor layer, the second semiconductor layer being more heavily doped than the semiconductor substrate, and the doped area extending between and contacting the second semiconductor layer and the first insulating layer.