Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same

摘要

A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming an interlayer dielectric layer over a semiconductor substrate; forming a contact hole by etching the interlayer dielectric layer; forming a preliminary plug filling the contact hole, wherein the preliminary plug includes a silicon-containing layer; selectively etching back the silicon-containing layer; and forming an undercut prevention layer formed over the etched back silicon-containing layer; forming a metal-containing layer over the interlayer dielectric layer including the preliminary plug; and forming a bit line and a bit line contact plug by etching the metal-containing layer and the preliminary plug.