| 摘要 |
PURPOSE:To obtain a large magnetoresistance effect with a low magnetic field applied. CONSTITUTION:Soft-magnetic thin magnetic film layers 1 mainly containing (NiXCo1-X)X'Fe1-X' and semi-hard-magnetic thin magnetic film layers 3 mainly containing (CoYNi1-Y)ZFe1-Z are alternately laminated. Metallic non-magnetic thin film layers 2 made of Cu, Ag, Au, Pt, Ru, Re, etc., are interposed between the respective thin magnetic layers 1, 3. Thickness of each layer is 10 to 100Angstrom . X, X', Y and Z are respectively in ranges of 0.6 to 1.0, 0.7 to 1.0, 0.4 to 1.0 and 0.8 to 1.0. When a weak magnetic field is applied, spin sequences of the thin magnetic layers 1, 3 are reversed, so that spin scattering of conductive electrons is maximum to indicate large electric resistance. When the magnetic field is strengthened, the spin sequences of the thin magnetic layers 1, 3 are parallel to each other so that spin scattering of the conductive electrons decreases to have electric resistance reduced. Therefore it is possible to obtain a large magnetoresistance effect at room temperature and with a practical low magnetic field applied. |
