发明名称 METHOD FOR FORMING FILM
摘要 In a film-forming process comprising depositing a molecule composed of a plurality of atoms on a substrate or reacting the molecule with an atom in the substrate to produce a compound, an improvement which comprises generating plasma in an atmosphere of a mixed gas of the molecule with an inert gas having a metastable energy level higher than the energy required for transferring the molecule to an atomic state, to thereby dissociate the molecule into atoms in advance prior to forming a film. This eliminates the need for dissociation of the molecule on the substrate and allows the practice of the film-forming process at a low temperature.
申请公布号 WO9950899(A1) 申请公布日期 1999.10.07
申请号 WO1999JP01429 申请日期 1999.03.23
申请人 UENO, TOMO 发明人 UENO, TOMO
分类号 H01L21/31;B01J19/08;C23C16/24;C23C16/40;C23C16/452;C23C16/50;C23C16/511;C23C26/00;H01L21/314;H01L21/316;H01L21/318;(IPC1-7):H01L21/316 主分类号 H01L21/31
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