| 摘要 |
PROBLEM TO BE SOLVED: To provide a combined processing unit capable of improving etching resistance of a resist mask and enlarging a process margin.SOLUTION: The combined processing unit includes: an electron beam irradiation module; a dry etching module; conveyance unit connected with the electron beam irradiation module and the dry etching module and performing transfer of wafers between the electron beam irradiation module and the dry etching module under a reduced pressure.SELECTED DRAWING: Figure 1 |
