| 摘要 |
An improved contact construction for an integrated circuit structure having closely spaced electrodes adjacent the contact is disclosed. The integrated circuit structure having the improved contact comprises a substrate having an insulating layer thereon, a first conductive layer over the insulating layer, and a second insulating layer formed over the first conductive layer. A self-aligned contact opening is formed through the second insulating layer, the underlying first conductive layer, and the first insulating layer to expose the substrate. A layer of insulating material is then formed on the sidewalls of the opening to cover the exposed edges of the first conductive layer. Conductive material is then placed in the self-aligned contact opening and a second conductive layer is formed over the second insulating layer whereby the conductive material placed in the self-aligned contact opening electrically connects the substrate with the second conducting layer.
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