| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that makes it possible to secure controllability of a width of an STI insulating layer for element isolation while controlling a depression in a trench. <P>SOLUTION: The semiconductor device manufacturing method has a step for forming a silicon nitride film 14, having an opening part 22 on a semiconductor substrate 10, a step for forming a silicon oxide film 15 on the silicon nitride film and on each side face of the opening part, a step for etching the silicon oxide film so as to form each side wall 16 on each side face of the opening part, a step for forming a trench 20 in the semiconductor substrate while using each side wall and the silicon nitride film as a mask, and a step for forming an insulating layer in the trench. A plasma oxidation method or a radical oxidation method is used for forming the silicon oxide film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
