MANUFACTURE OF ACTIVE MATRIX PANEL

摘要

PURPOSE:To provide a manufacturing method of a TFT wherein the number of its manufacturing processes can be reduced, as the TFT for the liquid crystal display of an active matrix type. CONSTITUTION:A TFT is formed by the manufacturing method wherein an ITO layer 2/a Mo layer 3/an n<+> layer 4 which are formed on a substrate 1 in succession are processed collectively by a mixed gas 6 of BCl3 and HBr, and thereafter, a gate insulating film/a semiconductor film/the n<+> film 4/the Mo film 3 are processed collectively by an SF6 gas, and thereafter, Al/Mo are processed collectively by a mixed gas of BCl3 and Cl2. Thereby, since the thin film transistor is formed by the applications of the only three collective processings to the multilayer films wherein the individual processing gases are used, the number of its manufacturing processes is remarkably reduced.