| 摘要 |
<p>PURPOSE:To shorten a photolithography process and to improve the yield by forming a 1st insulating layer, a semiconductor layer, and a 2nd insulating layer in an island shape at each intersection part and further forming the drain, source electrode, and gate bus line of a thin film field effect transistor (FET). CONSTITUTION:A pixel electrode is formed of a transparent conductive film on an insulating film 1 and an island-shaped gate electrode and drain bus lines 5a and 5b are formed of the laminate film of the transparent conductive film and 1st metal. The 1st insulating layer, semiconductor layer, and 2nd insulating layer are formed in the island shape at a thin film FET formation part and at each intersection part of the gate bus line 3a and drain bus lines 5a and 5b and the drain, source electrode, and gate bus line 3a of the thin film FET are formed of 2nd metal. Consequently, the photolithography process wherein a defect is easily generate is shortened and a larger display is manufactured at high yield.</p> |
