发明名称 |
Method for fabricating locally strained channel |
摘要 |
A manufacturing method for a semiconductor device is provided, wherein a silicon germanium (Si1-xGex; SiGe) layer and a strained silicon layer are sequentially formed on a semiconductor substrate. A gate oxide layer and a gate structure are further formed on the strained silicon layer. The gate structure and the strained silicon layer are heavily doped with n-type dopants to form a compressed gate and source/drain regions, respectively. A cap layer is further formed over the semiconductor substrate, followed by conducting an annealing process. The cap layer is subsequently removed.
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申请公布号 |
US6858506(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20030605122 |
申请日期 |
2003.09.10 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHANG KENT KUOHUA |
分类号 |
H01L21/336;H01L29/10;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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