发明名称 Barrier layer, IC via, and IC line forming methods
摘要 A barrier layer forming method includes providing a porous dielectric layer over a substrate, the dielectric layer having a surface with exposed pores, and treating the dielectric layer with a plasma formed from a methane-containing gas. The treating seals the exposed pores. The method includes depositing a barrier layer over the surface, the barrier layer being continuous over the sealed pores. The porous dielectric may be low K. The plasma may be formed at a bias of at least about 100 volts.
申请公布号 US7271089(B2) 申请公布日期 2007.09.18
申请号 US20040932156 申请日期 2004.09.01
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ S.;HOWARD BRADLEY J.
分类号 H01L21/4763 主分类号 H01L21/4763
代理机构 代理人
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