A CONTACT PLUG OF A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME

摘要

A contact plug of a semiconductor device is provided to guarantee a broad area of a contact hole as compared with a conventional technique by defining a contact hole and by forming a spacer in a range where a short or fail doesn't occur. A gate includes a first conductive layer(104) and a first metal layer. A first barrier metal layer is formed between the first conductive layer and the first metal layer. A spacer is formed on the sidewall of the gate. A second metal layer is formed on the semiconductor substrate between the spacers. A second barrier metal layer is formed between the spacer and the second metal layer, lower than the first conductive layer. A second conductive layer(126) is formed on the second metal layer between the spacers. The spacer can include a first spacer(112) formed on the sidewall of the first conductive layer and a second spacer(124) formed on the sidewall of the first metal layer.