| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel floating guard ring structure, which reduces a leakage current than a conventional floating guard ring structure. SOLUTION: The floating guard ring structure comprising a separate Nwell 4, Pwell 5, p<SP>+</SP>regions 6 and 7, and interconnections (a) to (e) is arranged around circuit Nwell 3a where a control circuit etc., is formed to suppress inflow of the leakage current from output-stage Nwell 2 where an output stage element is formed. COPYRIGHT: (C)2010,JPO&INPIT |
