| 摘要 |
PROBLEM TO BE SOLVED: To provide a process of deposited film formation using a plasma CVD method that suppresses changes in the distribution of a high-frequency power in the vicinity of surfaces of a cylindrical substrate and auxiliary substrates to suppress unevenness of film thickness and film quality and thereby suppress density unevenness in an output image.SOLUTION: Provided is a deposited film forming apparatus which applies a high-frequency power to electrodes arranged opposite a cylindrical substrate 1001 and auxiliary substrates 1002, 1003 installed in a substrate holder 1004 to generate plasm between the cylindrical substrate 1001 and the auxiliary substrates 1002, 1003 and the electrodes to thereby form a deposited film on the cylindrical substrate 1001, the deposition film forming apparatus having gaps at any opposing position between the auxiliary substrates 1002, 1003 and the cylindrical substrate 1001 or between cylindrical substrates 1001.SELECTED DRAWING: Figure 1 |
