| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to constitute simply a III nitride semiconductor crystal layer, which is favorable as the luminous layer of a buried laser diode having regions of different refractive indexes (forbidden bands) in the same layer. SOLUTION: This element is a III nitride semiconductor light-emitting element provided with a III nitride semiconductor crystal layer consisting of an AlXGaYAs1UNU (0<=X<=1, X+Y=1 and 0<U<=1) layer formed by substituting one part or all of the arsenic (As) being contained in a III-V compound semiconductor growth layer consisting of an AlXGaYAs (0<=X<=1 and X+Y=1) layer for nitrogen. Here, the III nitride semiconductor light-emitting element is constituted so that a first crystal region 120 of 0.60<=U<=0.98 of the compositional ratio (U) of nitrogen and a second crystal region 121, which is adjacent to the horizontal direction in parallel to the region 120 and has the compositional ratio (U) of nitrogen >=2% less than that of the region 120, are made to inhere in the same layer, and the light-emitting element is provided with the crystal layer as its luminous layer. |
