发明名称 Method of manufacturing aperture plate
摘要 A method of manufacturing an aperture plate using a plasma excitation chemical vapor deposition (CVD) device includes the steps of placing a metal plate in a vacuum chamber of the CVD device; discharging air inside the vacuum chamber; charging a mixture of a gas containing at least osmium and a gas containing a hydrogen gas; adjusting a pressure of the vacuum chamber at a predetermined level; and generating plasma inside the vacuum chamber. An electrically conductive amorphous coating having a dense structure is uniformly formed over a surface and an interior of a micro-hole of the aperture plate. Also, it is possible to form an osmium coating having a high purity and a low impurity content with good repeatability.
申请公布号 US6858263(B2) 申请公布日期 2005.02.22
申请号 US20020067542 申请日期 2002.02.07
申请人 DAIWA TECHNO SYSTEMS CO., LTD. 发明人 SATOH HIROSHI
分类号 C23C16/06;(IPC1-7):H05H1/24 主分类号 C23C16/06
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