发明名称 |
Method of manufacturing aperture plate |
摘要 |
A method of manufacturing an aperture plate using a plasma excitation chemical vapor deposition (CVD) device includes the steps of placing a metal plate in a vacuum chamber of the CVD device; discharging air inside the vacuum chamber; charging a mixture of a gas containing at least osmium and a gas containing a hydrogen gas; adjusting a pressure of the vacuum chamber at a predetermined level; and generating plasma inside the vacuum chamber. An electrically conductive amorphous coating having a dense structure is uniformly formed over a surface and an interior of a micro-hole of the aperture plate. Also, it is possible to form an osmium coating having a high purity and a low impurity content with good repeatability.
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申请公布号 |
US6858263(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20020067542 |
申请日期 |
2002.02.07 |
申请人 |
DAIWA TECHNO SYSTEMS CO., LTD. |
发明人 |
SATOH HIROSHI |
分类号 |
C23C16/06;(IPC1-7):H05H1/24 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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