发明名称 |
NANOCOMPOSITE-BASED NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
The present invention provides a nanocomposite-based non-volatile memory device and a method for manufacturing the same, the nanocomposite-based non-volatile memory device comprising: a substrate; a lower electrode formed on the substrate; an active layer formed on the lower electrode and made of an insulating organic material, in which a polycrystalline four-element nanocomposite is dispersed; and an upper electrode formed on the active layer.;According to the present invention, a non-volatile memory device can be provided which has an increased ON/OFF ratio and thereby substantially decreases sensing errors resulting from small noise of a circuit, and a non-volatile memory can be easily manufactured at comparatively low costs. |
申请公布号 |
US2016163767(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201414906711 |
申请日期 |
2014.04.15 |
申请人 |
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY |
发明人 |
KIM Taewhan;YUN Dongyeol;LEE Daeuk;ARUL Narayanasany Sabari |
分类号 |
H01L27/28;H01L51/00 |
主分类号 |
H01L27/28 |
代理机构 |
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代理人 |
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主权项 |
1. A nanocomposite-based non-volatile memory device, comprising:
a substrate; a lower electrode formed on the substrate; an active layer formed on the lower electrode and made of an insulating organic material in which a polycrystalline four-element nanocomposite is dispersed; and an upper electrode formed on the active layer. |
地址 |
Seoul KR |