| 摘要 |
A semiconductor structure includes a semiconductor substrate, a first active region, a second active region, a first trench, at least one protrusion part, and a first dielectric. The first active region exists in the semiconductor substrate. The second active region exists in the semiconductor substrate. The first trench exists in the semiconductor substrate, and separates the first active region from the second active region. The protrusion part protrudes from the semiconductor substrate and is arranged in the first trench. The first dielectric exists in the first trench and covers the protrusion part. So, a separation process can be carried out based on local oxidation of silicon (LOCOS). |
