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发明名称
ELECTRICALLY ERASABLE NON-BOLATILE SEMICONDUCTOR MEMORY DEVICE, SELECTIVE DATA ERASING METHOD AND EEPROM
摘要
申请公布号
KR950011726(B1)
申请公布日期
1995.10.09
申请号
KR19910005833
申请日期
1991.04.12
申请人
TOSHIBA CO.
发明人
ARITOME, SEIICHI;SIROTA, RIECHIRO;KIRISAWA, RYOWHEI;IWATA, YOSHIHISA;MOMOTOMI, MASAKI
分类号
G11C17/00;G11C16/02;G11C16/04;G11C16/16;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/00;G11C11/34
主分类号
G11C17/00
代理机构
代理人
主权项
地址
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